Electron Emitting Device
Electron emission device having the structure of nanocrystalline silicon dispersed in oxide film.
This device has the 3 properties shown below:
1. Electrons are emitted perpendicular to the emitting surface without collimation
2. High Energy（5eV～10eV）of emitted electrons
3. Possibility of Excitation under low vacuum condition (including in air)
Feature: Parallel and straight high energy electron emission.
The electron beam remains uniform even if the fluorescent screen is located far from the emitter.
No high vacuum needed, electron emitted even in the air.
(Ionized gas with the emitting electron is increased in 10 Torr or more)
Feature: The electron generated with high